Temperature dependency of retention time follows Black's/Arrhenius
equation. See slaa334.pdf and slaa392.pdf.

(But both neglected to point out that radiation can shorten the
retention time!)

For silicon revision E and earlier, you need to work around "LASH25"
bug when using marginal read. See slaz033.pdf

--- In m...@yahoogroups.com, Hardy Griech wrote:
>
> old_cow_yellow wrote:
> :
> > radiation, it loses some of its electrons. This decreases its immunity
> > against another radiation hit and shortens its retention expectancy.
> > (By the way, 100 years at 25C is equivalent to 8.5 months at 105C.)
>
> Oops! Where from do you have theses numbers? Or is this some
> arithmetic that 5K increase of temperature halves retention time?
>
> :
> > No I am not suggesting reprogram the Flash blindly at fixed intervals.
> >
> > For F261x, there is a way to test if Flash cells still have enough
> > "margin" before they actually "flip". I would periodically test it,
> > and reprogram only when there is not enough margin left.
>
> Thanks for the hint. The MSP430F2618 offers the marginal read mode. I
> will check it and see if I can implement it.
>
> Hardy
>

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