AS6C1016-55ZIN
Alliance Memory, Inc.
SRAM - Asynchronous Memory IC 1Mbit Parallel 55 ns 44-TSOP II
NRND183 in stock
Overview
The AS6C1016-55ZIN is a 1Mbit asynchronous CMOS static RAM organized as 64K x 16 bits. It operates over a wide voltage range of 2.7V to 5.5V, making it compatible with both 3.3V and 5V logic systems.
Why Choose This Part
This SRAM offers a fast access time of 55ns and features a low power consumption profile with a standby current of 130uA. Its 44-pin TSOP II package and standard parallel interface simplify integration with a variety of 8-bit and 16-bit processor architectures.
Applications
Legacy System Maintenance
Drop-in replacement for older 1Mb asynchronous SRAMs in industrial controllers and legacy computing hardware.
Embedded Buffer Memory
Provides fast temporary storage for microcontrollers that lack sufficient internal RAM for data logging or display buffering.
Battery-Backed Data Storage
Utilizes low standby current to preserve critical system parameters when paired with a small battery or supercapacitor.
Key Specifications
Technology
SRAM - Asynchronous
Access Time
55 ns
Memory Size
1Mbit
Memory Type
Volatile
Memory Format
SRAM
Mounting Type
Surface Mount
Package / Case
44-TSOP (0.400", 10.16mm Width)
Memory Interface
Parallel
Voltage - Supply
2.7V ~ 5.5V
Memory Organization
64K x 16
Operating Temperature
-40degC ~ 85degC (TA)
Supplier Device Package
44-TSOP II
Write Cycle Time - Word, Page
55ns
Getting Started
Interfacing requires a standard parallel bus with 16 address lines and 16 data lines, controlled by Chip Enable, Output Enable, and Write Enable signals. Ensure decoupling capacitors are placed close to the VDD pins to manage switching noise during high-speed access cycles.
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