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AS6C4008-55SIN

AS6C4008-55SIN

Alliance Memory, Inc.
SRAM - Asynchronous Memory IC 4Mbit Parallel 55 ns 32-SOP
Active5,093 in stock
Datasheet Digi-Key Compare Prices

Overview

The AS6C4008-55SIN is a 4Mbit asynchronous low-power CMOS static RAM organized as 512K x 8 bits. It operates over a wide voltage range of 2.7V to 5.5V, making it suitable for both legacy 5V systems and modern 3.3V low-power designs. This industrial-grade component features a fast 55ns access time and ultra-low standby current of 4uA, ideal for battery-backed memory applications.

Why Choose This Part

This SRAM offers a versatile 2.7V to 5.5V supply range, eliminating the need for level shifters in mixed-voltage environments. Its 55ns access time supports high-performance asynchronous bus cycles, while the 32-pin SOP package provides a balance between PCB space efficiency and ease of assembly.

Applications

Embedded System Main Memory
Provides reliable, high-speed working memory for 8-bit and 16-bit microcontrollers that lack sufficient internal RAM.
Battery-Backed Data Logging
Utilizes the ultra-low 4uA standby current to preserve critical system data during power-down cycles using a small backup battery or supercapacitor.
Communication Buffering
Acts as a temporary buffer for high-speed industrial communication protocols where deterministic access times are required.

Key Specifications

Technology SRAM - Asynchronous
Access Time 55 ns
Memory Size 4Mbit
Memory Type Volatile
Memory Format SRAM
Mounting Type Surface Mount
Package / Case 32-SOIC (0.445", 11.30mm Width)
Memory Interface Parallel
Voltage - Supply 2.7V ~ 5.5V
Memory Organization 512K x 8
Operating Temperature -40degC ~ 85degC (TA)
Supplier Device Package 32-SOP
Write Cycle Time - Word, Page 55ns

Getting Started

To use this device, interface the 19 address lines and 8 data lines directly to your MCU parallel bus or via a memory controller. Ensure that the Chip Enable (CE), Output Enable (OE), and Write Enable (WE) pins are correctly sequenced according to the 55ns timing diagrams in the datasheet. Decouple the VDD pin with a 0.1uF ceramic capacitor placed as close to the IC as possible.

Part of SRAM Asynchronous family » AS6C4008-55

AS6C4008-55 Family

Comparing specs that differ across variants. The current part is highlighted.

Part Number Package Temp Range Stock
AS6C4008-55SIN (this part) SOIC-32 -40degC ~ 85degC (.. 5,093
AS6C4008-55PCN DIP-32 0degC ~ 70degC (TA) 443
AS6C4008-55TIN TFSOP-32 -40degC ~ 85degC (.. 909
AS6C4008-55ZIN SOIC-32 -40degC ~ 85degC (.. 1,606
AS6C4008-55PIN DIP-32 -40degC ~ 85degC (.. 1,643

Also Consider

CY62148EV30 MoBL IFXInfineon Technologies - Offers a faster 45ns access time and is optimized specifically for mobile low-power applications.
AS6C4008-55PCN Alliance Memory, Inc. - The DIP-32 version of the same memory IC, preferred for breadboarding and through-hole prototyping.