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AS6C4016-55ZIN

AS6C4016-55ZIN

Alliance Memory, Inc.
SRAM - Asynchronous Memory IC 4Mbit Parallel 55 ns 44-TSOP II
Active9,768 in stock
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Overview

The AS6C4016-55ZIN is a 4Mbit asynchronous low-power CMOS static RAM organized as 256K x 16 bits. It operates over a wide voltage range of 2.7V to 5.5V, making it compatible with both legacy 5V systems and modern low-power 3.3V architectures. The device features very low standby current and is designed for applications requiring high reliability and simple parallel interfacing without the need for a clock.

Why Choose This Part

This SRAM offers a broad supply voltage range of 2.7V to 5.5V and fully static operation, eliminating the need for refresh cycles. It includes data byte control for flexible 8-bit or 16-bit access and features tri-state outputs for easy bus integration. The low-power consumption profile, specifically the 4uA standby current, is ideal for power-sensitive designs.

Applications

Industrial Control Systems
Used as external scratchpad memory for PLCs and industrial controllers operating in harsh temperature environments from -40C to 85C.
Embedded Computing
Provides fast 55ns access time for code execution or data buffering in 16-bit microcontroller and microprocessor systems.
Battery-Powered Instrumentation
Leverages 4uA typical standby current and 1.5V minimum data retention voltage to extend battery life in portable devices.
Communication Buffers
Acts as a high-speed buffer for networking equipment and protocol converters requiring asynchronous parallel access.

Key Specifications

Technology SRAM - Asynchronous
Access Time 55 ns
Memory Size 4Mbit
Memory Type Volatile
Memory Format SRAM
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width)
Memory Interface Parallel
Voltage - Supply 2.7V ~ 5.5V
Memory Organization 256K x 16
Operating Temperature -40degC ~ 85degC (TA)
Supplier Device Package 44-TSOP II
Write Cycle Time - Word, Page 55ns

Getting Started

To interface this SRAM, connect the 18-bit address bus and 16-bit data bus to your MCU's external memory interface (EMC/EBI). Ensure the Byte High Enable (BHE) and Byte Low Enable (BLE) pins are driven correctly for the desired word width. Since it is a parallel device, no software drivers or initialization sequences are required; simply perform standard memory-mapped read/write operations.

AS6C4016-55 Family

Comparing specs that differ across variants. The current part is highlighted.

Part Number Package Stock
AS6C4016-55ZIN (this part) TSOP-44 9,768
AS6C4016-55BIN LFBGA-48 —

Categories

Memory & Storage > SRAM