AS6C8016B-55BIN
Overview
The AS6C8016B-55BIN is an 8,192K-bit (8Mbit) CMOS low power asynchronous SRAM organized as 512K words by 16 bits. It operates from a wide supply voltage range of 2.7V to 3.6V and features a fast 55ns access time, making it suitable for buffering and temporary data storage in high-speed embedded systems. The device includes data byte control for flexible 8-bit or 16-bit access and maintains data retention down to 1.5V.
Why Choose This Part
This SRAM offers a superior balance of density and power consumption, with a typical standby current of only 2.5uA. Its fully static operation eliminates the need for external refresh clocks, simplifying the memory controller logic on the host MCU or FPGA. The industrial temperature rating of -40C to 85C ensures reliable operation in harsh environments.
Applications
Key Specifications
Getting Started
To interface this SRAM, connect the 19-bit address bus and 16-bit data bus to your processor's External Memory Interface (EMIF) or FSMC. Ensure pull-up resistors are present on the Chip Select (CE#) and Write Enable (WE#) lines to prevent bus contention during power-up. Timing parameters should be configured in the host controller to match the 55ns read/write cycle times specified at 2.7V.
