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AS7C316098B-10TIN

AS7C316098B-10TIN

Alliance Memory, Inc.
SRAM - Asynchronous Memory IC 16Mbit Parallel 10 ns 54-TSOP II
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Overview

The AS7C316098B-10TIN is a high-performance 16Mbit asynchronous CMOS static RAM organized as 1,048,576 words by 16 bits. It operates on a single 3.3V power supply and features a very fast 10ns access time, making it suitable for high-speed memory applications. The device includes data byte control through LB# and UB# pins to allow independent access to the lower and upper bytes.

Why Choose This Part

The 10ns access time enables zero-wait-state operation in many high-frequency embedded systems. Its fully static design eliminates the need for refresh clocks, simplifying the memory controller logic. Additionally, the tri-state outputs and byte-level control (LB/UB) provide flexible interfacing for 16-bit wide data buses.

Applications

High-Speed Buffer Memory
Used as a temporary data buffer for networking equipment and high-speed communication interfaces requiring 10ns response times.
Embedded Computing Cache
Provides external fast-access workspace for microcontrollers and DSPs that lack sufficient internal SRAM for large data sets.
Industrial Control Systems
Serves as reliable, fully static program or data memory in PLC and automation hardware requiring 3.3V TTL compatibility.
Battery-Backed Data Logging
Utilizes the low 1.5V minimum data retention voltage for maintaining critical system state during power-down cycles.

Key Specifications

Technology SRAM - Asynchronous
Access Time 10 ns
Memory Size 16Mbit
Memory Type Volatile
Memory Format SRAM
Mounting Type Surface Mount
Package / Case 54-TSOP (0.400", 10.16mm Width)
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Memory Organization 1M x 16
Operating Temperature -40degC ~ 85degC (TA)
Supplier Device Package 54-TSOP II
Write Cycle Time - Word, Page 10ns

Getting Started

To use this SRAM, interface the 20-bit address bus and 16-bit data bus to your MCU or FPGA parallel memory controller. Ensure the 2.7V to 3.6V supply is well-decoupled with ceramic capacitors near the VDD pins. Timing diagrams for Read and Write cycles must be strictly followed to meet the 10ns specification, particularly regarding Chip Enable and Output Enable setup times.

Also Consider

IS61WV102416BLL-10TLI ISSI - Offers similar 16Mb density and 10ns speed in a 48-pin TSOP-I package for alternative board layouts.