EmbeddedRelated.com
    Parts   Memory & Storage  SRAM    AS7C34098A-10TCN
AS7C34098A-10TCN

AS7C34098A-10TCN

Alliance Memory, Inc.
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP2
NRND1,328 in stock
Datasheet Digi-Key Mouser Compare Prices

Overview

The AS7C34098A-10TCN is a high-performance 4Mbit CMOS asynchronous SRAM organized as 256K x 16 bits. It operates on a single 3.3V power supply and features a rapid 10 ns access time, making it suitable for high-speed cache and buffer applications where volatile memory is required.

Why Choose This Part

The device offers a very fast 10 ns access time and utilizes a simple asynchronous interface that requires no clock, simplifying timing constraints for designers. Its 16-bit wide data bus provides high bandwidth, while the 44-pin TSOP2 package offers a compact footprint for space-constrained PCB layouts.

Applications

High-Speed Data Buffering
Used as a temporary buffer for high-speed data transfers in networking hardware and digital signal processing systems.
Embedded System Main Memory
Acts as the primary working memory for microcontrollers and microprocessors that lack sufficient internal RAM for complex algorithms.
Cache Memory
Provides low-latency data storage for frequently accessed instructions or data in industrial computing environments.
Lookup Tables
Stores large static datasets for real-time mathematical computations or signal conversion processes.

Key Specifications

Technology SRAM - Asynchronous
Access Time 10 ns
Memory Size 4Mbit
Memory Type Volatile
Memory Format SRAM
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width)
Memory Interface Parallel
Voltage - Supply 3V ~ 3.6V
Memory Organization 256K x 16
Operating Temperature 0degC ~ 70degC (TA)
Supplier Device Package 44-TSOP2
Write Cycle Time - Word, Page 10ns

Getting Started

To interface with this SRAM, connect the address lines (A0-A17) and data lines (I/O0-I/O15) to your processor's external memory interface. Ensure that the Chip Enable (CE), Output Enable (OE), and Write Enable (WE) signals are properly timed according to the 10 ns cycle requirements. Decoupling capacitors should be placed as close as possible to the VDD pins to manage the 170mA peak operating current.

Also Consider

IS61WV25616EDBLL-10TLI ISSI - Offers similar 4Mbit (256K x 16) density and 10 ns access time with high-speed ECC features for improved reliability.
CY7C1041G30-10ZSXI IFXInfineon Technologies - A widely used 4Mbit asynchronous SRAM alternative with comparable timing and 3V operation in a 44-TSOP2 package.

Categories

Memory & Storage > SRAM