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AT25XE041B-MHN-T

AT25XE041B-MHN-T

Renesas / Dialog
NOR Flash 4 Mbit, Wide Vcc (1.65V to 3.6V), -40C to 85C, DFN 5x6 (Tape & Reel), Fusion (Single, Dual) SPI NOR flash
4,666 in stock

Overview

The AT25XE041B-MHN-T is a 4 Mbit Fusion Serial SPI NOR flash memory device designed for ultra-low power consumption and wide voltage operation from 1.65V to 3.6V. It features specialized power-saving modes, including an Ultra-Deep Power-Down mode that reduces current consumption to approximately 0.2 uA, making it ideal for battery-operated systems. This part supports Single and Dual-I/O SPI interfaces and is housed in a compact 5 x 6 mm UDFN package.

Why Choose This Part

The primary advantage is its exceptional power management, featuring an Ultra-Deep Power-Down mode that draws significantly less current than standard standby. The wide operating voltage range eliminates the need for level shifters or dedicated regulators in diverse power environments. Its Dual-I/O capability also allows for increased data throughput compared to standard single SPI flash devices.

Applications

Battery-Powered IoT Nodes
Ideal for data logging and code storage in remote sensors where standby current is a critical design constraint.
Wearable Device Firmware
Provides efficient firmware storage for fitness trackers and smartwatches requiring a small footprint and low voltage operation.
BIOS and Boot Code
Suitable for storing bootloader and configuration data in space-constrained embedded systems.
Portable Medical Devices
Reliable non-volatile storage for handheld diagnostic tools that operate across a wide 1.65V to 3.6V supply range.

Getting Started

Integration requires a standard SPI or Dual-SPI master controller; drivers are widely available in most RTOS environments. For evaluation, use a 1.27mm pitch adapter or a target board with a UDFN-8 footprint. Ensure the SPI clock frequency is matched to the MCU capabilities and monitor the WIP (Write In Progress) bit in the status register during page program or erase operations.

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