AT45DB641E-MHN2B-T
Overview
The AT45DB641E-MHN2B-T is a 64 Mbit DataFlash memory featuring a flexible wide voltage range of 1.7V to 3.6V. It utilizes a page-oriented architecture with two internal SRAM buffers for simultaneous read and write operations, allowing for efficient data management in embedded systems. This specific variant is configured for binary page sizes of 256 bytes and is housed in a compact 5x6mm UDFN package.
Why Choose This Part
The part offers an Ultra-Deep Power-Down mode with a typical consumption of 0.3uA, making it ideal for energy-constrained designs. Its dual-SRAM buffer architecture enables continuous data throughput and the ability to perform 'Read-Modify-Write' operations with ease. Additionally, the wide operating voltage of 1.7V to 3.6V ensures compatibility with both legacy 3.3V systems and modern low-voltage logic.
Applications
Key Specifications
Getting Started
To interface with this device, use a standard SPI controller supporting Mode 0 or Mode 3. Engineers should utilize the built-in SRAM buffers to streamline page programming and minimize the impact of the 5ms page write cycle time. Logic level translation is not required if the host MCU operates within the supported 1.7V to 3.6V range.



