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BPW17N

BPW17N

Vishay Semiconductor Opto Division
Phototransistors 825nm Top View Radial
Active10,079 in stock

Overview

The BPW17N is a high-sensitivity NPN silicon phototransistor housed in a miniature T-3/4 clear plastic package. It is designed to detect both visible and near-infrared radiation with a peak sensitivity at 825nm, making it ideal for high-precision optical sensing in space-constrained designs.

Why Choose This Part

This component offers a narrow 24-degree viewing angle (half-sensitivity at +/- 12 degrees) which minimizes crosstalk in multi-sensor arrays. Its fast response times and high radiant sensitivity allow for accurate signal processing up to a 120kHz bandwidth.

Applications

Optical Switches
Reliable detection in non-contact limit switches and position sensors within industrial machinery.
Pulse Counters
High-speed sensing for counting revolutions or objects on a production line using infrared emitters.
Electronic Control Circuits
Acts as a detector for light-driven drive circuits and automation feedback loops.
Near-IR Detection
Optimized for 825nm wavelength applications including secure IR data links and proximity sensing.

Key Specifications

Wavelength 825nm
Orientation Top View
Power - Max 100 mW
Mounting Type Through Hole
Viewing Angle 24deg
Package / Case Radial
Operating Temperature -40degC ~ 100degC
Current - Dark (Id) (Max) 200 nA
Current - Collector (Ic) (Max) 1 mA
Voltage - Collector Emitter Breakdown (Max) 32 V

Getting Started

To use the BPW17N, configure it in a common-emitter circuit with a suitable load resistor to convert collector current into a measurable voltage. Ensure the 1.8mm radial package is oriented toward your light source, and monitor the 1mA maximum collector current to prevent saturation in high-gain applications.

Also Consider

TEPT4400 Vishay Semiconductor - Consider this if you need a standard 3mm (T-1) package size instead of the smaller 1.8mm T-3/4 footprint.
BPW46 Vishay Semiconductor - A PIN photodiode alternative for applications requiring even faster response times than a phototransistor.