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BSC035N10NS5ATMA1

IFXBSC035N10NS5ATMA1

Infineon Technologies
N-Channel 100 V 100A (Tc) 2.5W (Ta), 156W (Tc) Surface Mount PG-TDSON-8-7
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Overview

The BSC035N10NS5ATMA1 is a high-performance OptiMOS 5 N-Channel power MOSFET designed for high-frequency switching and synchronous rectification. It features a 100V breakdown voltage and an exceptionally low Rds(on) of 3.5 mOhms, making it ideal for power-dense industrial and automotive power conversion applications.

Why Choose This Part

This MOSFET utilizes OptiMOS 5 technology to achieve a low figure of merit (Rds(on) x Qg), significantly reducing switching and conduction losses. The PG-TDSON-8 package offers superior thermal resistance and a high continuous drain current rating of up to 100A (Tc).

Applications

Synchronous Rectification
Used in the secondary side of AC/DC SMPS and isolated DC/DC converters to improve efficiency by replacing Schottky diodes.
Motor Drives
Suitable for 48V-72V BLDC motor control systems in power tools, light electric vehicles, and robotics.
Solar Inverters
High-efficiency switching in micro-inverters and power optimizers within renewable energy systems.
Battery Management Systems
Provides low-loss protection switching and cell balancing in multi-cell lithium-ion battery packs.

Key Specifications

FET Type N-Channel
Vgs (Max) +/-20V
Technology MOSFET (Metal Oxide)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Vgs(th) (Max) @ Id 3.8V @ 115uA
Operating Temperature -55degC ~ 150degC (TJ)
Rds On (Max) @ Id, Vgs 3.5mOhm @ 50A, 10V
Power Dissipation (Max) 2.5W (Ta), 156W (Tc)
Supplier Device Package PG-TDSON-8-7
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25degC 100A (Tc)

Getting Started

When designing with this MOSFET, ensure proper thermal relief on the PCB drain pad to handle high power dissipation, which can reach up to 156W under ideal cooling conditions. Use a high-current gate driver capable of managing the gate charge at 10V Vgs to minimize switching transitions.

Also Consider

CSD19532Q5B TITexas Instruments - A comparable 100V N-channel MOSFET in a standard 5x6mm SON package with low gate charge.