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C3M0160120D

C3M0160120D

Wolfspeed, Inc.
N-Channel 1200 V 17A (Tc) 97W (Tc) Through Hole TO-247-3
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Overview

The C3M0160120D is a 1200V Silicon Carbide (SiC) MOSFET from Wolfspeed's C3M technology platform, offering a maximum drain current of 17A at 25C. This N-channel device is designed to provide high blocking voltage with significantly lower switching losses and higher thermal conductivity compared to traditional silicon-based transistors. Its TO-247-3 package and fast intrinsic diode make it suitable for high-efficiency power conversion in demanding environments.

Why Choose This Part

This SiC MOSFET features a low On-resistance of 208mOhm and high-speed switching capabilities with low parasitic capacitances. It provides a fast intrinsic diode with very low reverse recovery charge (Qrr), allowing for higher switching frequencies which reduce the size of passive components like inductors and capacitors. The SiC technology ensures stable operation up to a junction temperature of 150C, enabling higher power density in compact designs.

Applications

Renewable Energy Inverters
Optimizing efficiency in solar string inverters and wind power converters by reducing switching losses at high frequencies.
EV Charging Stations
High-voltage DC/DC stages in Level 3 fast chargers where high breakdown voltage and thermal stability are critical.
Uninterruptible Power Supplies (UPS)
Used in the inverter stage of industrial UPS systems to improve power density and reduce cooling requirements.
High Voltage DC/DC Converters
Implementing resonant topologies for industrial power supplies requiring 1200V blocking capabilities.

Key Specifications

FET Type N-Channel
Vgs (Max) +15V, -4V
Technology SiCFET (Silicon Carbide)
Mounting Type Through Hole
Package / Case TO-247-3
Vgs(th) (Max) @ Id 3.6V @ 2.33mA
Operating Temperature -55degC ~ 150degC (TJ)
Rds On (Max) @ Id, Vgs 208mOhm @ 8.5A, 15V
Power Dissipation (Max) 97W (Tc)
Supplier Device Package TO-247-3
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 15 V
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 632 pF @ 1000 V
Drive Voltage (Max Rds On, Min Rds On) 15V
Current - Continuous Drain (Id) @ 25degC 17A (Tc)

Getting Started

When designing with this device, ensure gate drive circuitry can provide the required +15V/-4V swing for optimal switching performance and to prevent unintended turn-on. Use low-inductance PCB layouts and consider Kelvin source connections if using the 4-lead variant to minimize gate ringing. Thermal management should be calculated based on the 97W maximum power dissipation and RthJC specifications provided in the datasheet.

Also Consider

SCT3160KLGC11 Rohm Semiconductor - An alternative 1200V SiC MOSFET with similar current ratings and a TO-247N package.