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CAT24C04WI-GT3

CAT24C04WI-GT3

ON Semiconductor
Same family and command set but 4-Kbit density for designs that need less storage and potentially lower cost.
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Overview

The CAT24C04WI-GT3 is a 4-Kbit I2C Serial EEPROM organized internally as 32 pages of 16 bytes each. It operates across a wide voltage range of 1.7V to 5.5V and features a 16-byte page write buffer for efficient data storage. This non-volatile memory is designed for low-power applications, drawing only 1uA in standby mode.

Why Choose This Part

It offers high reliability with 1,000,000 program/erase cycles and 100-year data retention. The device includes hardware write protection for the entire memory array and integrated Schmitt triggers with noise suppression filters on the I2C inputs to ensure robust communication in noisy environments.

Applications

Configuration Storage
Storing calibration data, user preferences, and network settings in embedded systems.
Identification Memory
Holding serial numbers and revision data for hardware identification and asset tracking.
Event Logging
Recording error codes or system state changes in small-scale data logging applications.

Key Specifications

Technology EEPROM
Access Time 900 ns
Memory Size 4Kbit
Memory Type Non-Volatile
Memory Format EEPROM
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Clock Frequency 400 kHz
Memory Interface I2C
Voltage - Supply 1.7V ~ 5.5V
Memory Organization 512 x 8
Operating Temperature -40degC ~ 85degC (TA)
Supplier Device Package 8-SOIC
Write Cycle Time - Word, Page 5ms

Getting Started

Interface this EEPROM via the I2C bus using a standard master controller at clock frequencies up to 400 kHz. Ensure the WP pin is tied to GND for normal write operations or to VCC to protect the entire memory. Use a 0.1uF bypass capacitor close to the VCC pin to maintain power stability during write cycles.

Also Consider

24LC04B-I/SN MCHPMicrochip - A widely available alternative with similar 4-Kbit density and 8-SOIC footprint.
AT24C04D-SSHM-T Microchip (Atmel) - Offers an ultra-low operating voltage range and high endurance for critical data storage.
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