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CY15B101N-ZS60XM

IFXCY15B101N-ZS60XM

Infineon Technologies
FRAM (Ferroelectric RAM) Memory IC 1Mbit Parallel 90 ns 44-TSOP II
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Overview

The CY15B101N-ZS60XM is a 1Mbit non-volatile Ferroelectric RAM (F-RAM) organized as 64K x 16 and accessed via a 16-bit parallel interface. Unlike standard SRAM, it retains data without a battery, and unlike Flash or EEPROM, it offers NoDelay writes with high endurance and lower power consumption during write cycles.

Why Choose This Part

This F-RAM provides 100 trillion read/write cycles, far exceeding the endurance of Flash or EEPROM. It features a wide operating temperature range from -55 C to +125 C and a low-power sleep mode drawing only 3 uA, making it suitable for extreme environments and battery-backed applications.

Applications

Industrial Data Logging
Ideal for high-frequency data recording where power loss could occur, ensuring the most recent data is preserved without wear-out concerns.
Configuration Storage
Stores system parameters that require frequent updates or instant persistence upon power-down.
Real-Time Embedded Systems
Used as a fast non-volatile buffer for sensor data in systems requiring 90 ns access times.
Power-Fail Event Capturing
Reliably records critical system state information during unexpected power interruptions due to low power requirements.

Key Specifications

Technology FRAM (Ferroelectric RAM)
Access Time 90 ns
Memory Size 1Mbit
Memory Type Non-Volatile
Memory Format FRAM
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width)
Memory Interface Parallel
Voltage - Supply 2V ~ 3.6V
Memory Organization 64K x 16
Operating Temperature -55degC ~ 125degC (TA)
Supplier Device Package 44-TSOP II
Write Cycle Time - Word, Page 90ns

Getting Started

To integrate this device, interface the 44-pin TSOP II package with a microcontroller or FPGA capable of managing a 16-bit parallel bus. Ensure the supply voltage remains within the 2V to 3.6V range and utilize the NoDelay write capability to simplify firmware by eliminating the need for polling or wait states during write cycles.

Also Consider

CY15B104QN IFXInfineon Technologies - Consider this 4Mbit variant if your application requires higher density and a serial SPI interface instead of parallel.
MR25H10 Everspin Technologies - This is a 1Mbit MRAM alternative which offers similar non-volatile performance for high-speed applications.