IFXCY15B256Q-SXE
Overview
The CY15B256Q-SXE is a 256-Kbit non-volatile Ferroelectric RAM (F-RAM) that uses a serial SPI interface and is designed for high-endurance data logging. Unlike standard EEPROM or Flash, F-RAM performs writes at bus speed without soak times and offers virtually unlimited endurance of 100 trillion read/write cycles. This device operates from a 2.7V to 3.6V supply and is rated for the extended temperature range of -40C to +125C.
Why Choose This Part
This F-RAM eliminates the write-delay associated with other non-volatile technologies, supporting SPI clock speeds up to 33MHz for instant data storage. It features extremely low power consumption with a 12uA sleep mode and provides 151-year data retention, making it an ideal replacement for battery-backed SRAM.
Applications
Getting Started
Interface the device via a standard four-wire SPI bus (Mode 0 or 3) using an MCU operating at 3.0V nominal logic. Since it behaves like an SRAM with non-volatile properties, no specialized wear-leveling algorithms or page-write buffers are required in your firmware. Ensure the VDD supply is decoupled with a 0.1uF capacitor placed close to the SOIC-8 package pins.
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