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CY62147EV30LL-45ZSXI

IFXCY62147EV30LL-45ZSXI

Infineon Technologies
SRAM - Asynchronous Memory IC 4Mbit Parallel 45 ns 44-TSOP II
NRND2,664 in stock

Overview

The CY62147EV30LL-45ZSXI is a 4-Mbit high-performance CMOS static RAM (SRAM) organized as 256K words by 16 bits. This MoBL (More Battery Life) device is designed for low-power asynchronous operation, featuring a wide supply voltage range from 2.2V to 3.6V and a fast 45 ns access time.

Why Choose This Part

It offers an ultra-low standby current of 7 uA and an active current of 3.5 mA at 1 MHz, significantly reducing power consumption in portable applications. The device features an automatic power-down capability when deselected and is housed in a compact 44-pin TSOP II package for high-density board layouts.

Applications

Battery-Powered Handheld Devices
Ideal for mobile electronics requiring high-speed data access with extremely low standby current to extend battery runtime.
Embedded System Buffer
Used as external memory for microcontrollers lacking sufficient internal RAM for data logging or frame buffering.
Industrial Control Systems
Provides reliable workspace memory for PLCs and industrial sensors operating in temperatures from -40C to 85C.
Communication Infrastructure
Serves as a high-speed scratchpad for networking hardware and protocol converters.

Key Specifications

Technology SRAM - Asynchronous
Access Time 45 ns
Memory Size 4Mbit
Memory Type Volatile
Memory Format SRAM
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width)
Memory Interface Parallel
Voltage - Supply 2.2V ~ 3.6V
Memory Organization 256K x 16
Operating Temperature -40degC ~ 85degC (TA)
Supplier Device Package 44-TSOP II
Write Cycle Time - Word, Page 45ns

Getting Started

To interface this SRAM, connect the 16-bit parallel data bus and address lines to your MCU's external memory interface (EMC/FSMC). Ensure proper pull-up resistors on the Chip Enable (CE) and Write Enable (WE) pins to prevent data corruption during power-up cycles.