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CY62147G30-45ZSXIT

IFXCY62147G30-45ZSXIT

Infineon Technologies
SRAM MICROPOWER SRAMS
850 in stock
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Overview

The CY62147G30-45ZSXIT is a high-performance 4-Mbit asynchronous SRAM organized as 256K words by 16 bits. It features MoBL (More Battery Life) technology for ultra-low standby current and includes integrated Error Correcting Code (ECC) to enhance reliability in noise-sensitive environments. The device operates across a wide 2.2V to 3.6V supply range with a fast 45ns access time.

Why Choose This Part

This SRAM provides superior reliability via integrated ECC, which automatically detects and corrects single-bit errors. Its wide voltage range (2.2V to 3.6V) allows it to interface directly with multiple logic levels, while the micropower design reduces thermal dissipation in dense enclosures.

Applications

Battery-Powered Handhelds
The ultra-low 3.5uA standby current and 1.0V data retention capability extend battery life in portable instrumentation and industrial scanners.
Industrial Control Systems
On-chip ECC provides hardware-level protection against soft errors, making it suitable for high-reliability PLC and motor drive applications.
FPGA External Memory
Provides fast, low-latency parallel memory for buffering sensor data or storing configuration parameters in FPGA-based designs.
Telecom Infrastructure
Used in networking cards and base stations for temporary storage and high-speed data buffering across the industrial temperature range.

Key Specifications

Technology SRAM - Asynchronous
Access Time 45 ns
Memory Size 4Mbit
Memory Type Volatile
Memory Format SRAM
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width)
Memory Interface Parallel
Voltage - Supply 2.2V ~ 3.6V
Memory Organization 256K x 16
Operating Temperature -40degC ~ 85degC (TA)
Supplier Device Package 44-TSOP II
Write Cycle Time - Word, Page 45ns

Getting Started

To integrate this part, connect the 16-bit parallel data bus and address lines to your MCU or FPGA asynchronous memory interface. Ensure appropriate decoupling capacitors are placed near the VDD pins, and utilize the ERR pin to monitor for single-bit error corrections if your system requires high-integrity data logging.

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