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CY7C1041G-10ZSXI

IFXCY7C1041G-10ZSXI

Infineon Technologies
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II
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Overview

The CY7C1041G-10ZSXI is a high-performance 4-Mbit asynchronous SRAM organized as 256K words by 16 bits. It operates within a 4.5V to 5.5V supply range and features an integrated Error Correction Code (ECC) engine to enhance reliability by correcting single-bit errors.

Why Choose This Part

This SRAM provides a significant reliability advantage through its on-chip hardware ECC, which automatically detects and corrects single-bit errors without user intervention. It combines a fast 10 ns access time with a low-power 1.0V data retention mode, making it suitable for volatile storage in high-speed 5V logic applications.

Applications

Industrial Control Systems
Used as fast buffer memory for PLCs and industrial controllers requiring high-speed asynchronous access without refresh cycles.
Legacy System Maintenance
Ideal for hardware refreshes of 5V systems that require 10 ns access times and parallel memory interfaces.
Critical Embedded Computing
Serves as reliable data storage in systems where the embedded ECC helps prevent soft errors in harsh electrical environments.

Key Specifications

Technology SRAM - Asynchronous
Access Time 10 ns
Memory Size 4Mbit
Memory Type Volatile
Memory Format SRAM
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width)
Memory Interface Parallel
Voltage - Supply 4.5V ~ 5.5V
Memory Organization 256K x 16
Operating Temperature -40degC ~ 85degC (TA)
Supplier Device Package 44-TSOP II
Write Cycle Time - Word, Page 10ns

Getting Started

To evaluate this memory, engineers typically interface it with an FPGA or a microcontroller featuring an External Memory Interface (EMIF) or Flexible Static Memory Controller (FSMC). Ensure proper decoupling with 0.1-uF capacitors near the VCC pins and follow high-speed PCB layout guidelines to manage the 10 ns signal integrity requirements.

Also Consider

IS61WV25616EDBLL-10TLI ISSI - A common 4Mb asynchronous SRAM alternative with similar 10 ns access speeds and 44-pin TSOP II packaging.
CY7C1041G30-10ZSXI IFXInfineon Technologies - The 3.3V version of the same memory family for applications migrating away from 5V logic.
AS6C4016-55ZIN Alliance Memory - A lower-speed, low-power alternative suitable for battery-backed applications where 10 ns speed is not required.