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CY7C1041G30-10ZSXI

IFXCY7C1041G30-10ZSXI

Infineon Technologies
SRAM CMOS RAM W ECC 4-Mbit
2,663 in stock

Overview

The CY7C1041G30-10ZSXI is a high-performance 4-Mbit CMOS static RAM organized as 256K words by 16 bits. This asynchronous SRAM features embedded Error Correcting Code (ECC) to detect and correct single-bit errors, significantly enhancing data reliability in demanding environments. It operates at a 10-ns access time and supports low-power data retention down to 1.0 V.

Why Choose This Part

The integrated hardware ECC provides transparent single-bit error correction without performance overhead, ensuring high data integrity. Its ultra-low standby current of 6 uA makes it ideal for battery-backed applications, while the 44-pin TSOP II package offers a standard footprint for space-constrained PCB designs.

Applications

Industrial Control Systems
Reliable temporary data storage for PLCs and industrial automation where ECC prevents bit-flips in harsh electrical environments.
Networking Infrastructure
High-speed buffer memory for routers and switches requiring low-latency asynchronous access.
Embedded Computing
Main system memory for microcontrollers and DSPs that lack sufficient internal RAM for data-intensive processing tasks.

Getting Started

Engineers should interface this device with a microcontroller or FPGA using a standard asynchronous SRAM controller interface. Ensure adequate decoupling capacitors are placed near the VDD pins to handle the 38mA peak operating current at 100MHz. Data sheets provide detailed timing diagrams for address setup and chip enable signals to meet the 10ns access requirement.

Also Consider

IS61WV25616EDBLL-10TLI ISSI - A common high-speed alternative with similar timing specs and package for industrial memory applications.
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