EmbeddedRelated.com
    Parts    CY7C1041GE30-10BVXI
CY7C1041GE30-10BVXI

CY7C1041GE30-10BVXI

Cypress Semiconductor Corp
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-VFBGA (6x8)
Active879 in stock
Datasheet Digi-Key Mouser Compare Prices

Overview

The CY7C1041GE30-10BVXI is a high-performance 4Mbit asynchronous SRAM organized as 256K words by 16 bits. It features an advanced embedded Error Correcting Code (ECC) engine that automatically detects and corrects single-bit errors, significantly improving reliability over standard SRAM components.

Why Choose This Part

This SRAM integrates on-chip ECC to provide hardened reliability without the software overhead of external error management. It supports a wide 2.2V to 3.6V supply range and features a low-voltage data retention mode down to 1.0V, making it suitable for battery-backed applications.

Applications

Industrial Automation
Reliable data storage for PLC controllers and HMI units where single-bit error protection is critical for system uptime.
Communication Infrastructure
High-speed packet buffering and look-up tables in networking gear requiring 10 ns access times.
Instrumentation
Precision measurement equipment that benefits from the ERR pin to monitor memory health and data integrity.

Key Specifications

Technology SRAM - Asynchronous
Access Time 10 ns
Memory Size 4Mbit
Memory Type Volatile
Memory Format SRAM
Mounting Type Surface Mount
Package / Case 48-VFBGA
Memory Interface Parallel
Voltage - Supply 3V ~ 3.6V
Memory Organization 256K x 16
Operating Temperature -40degC ~ 85degC (TA)
Supplier Device Package 48-VFBGA (6x8)
Write Cycle Time - Word, Page 10ns

Getting Started

To integrate this memory, interface the 16-bit parallel bus with a microcontroller or FPGA external memory interface (EMIF). Monitor the ERR pin for real-time notification of single-bit corrections, and ensure proper decoupling of the 3.0V supply near the 48-VFBGA package to maintain signal integrity at 10 ns speeds.

Also Consider

IS61WV25616EDBLL-10BLI ISSI - A direct 4Mb asynchronous SRAM alternative with a 10 ns access time and similar 48-miniBGA packaging.
AS6C4016-55BIN Alliance Memory - A lower-speed, low-power 4Mb SRAM option for applications where power consumption is more critical than 10 ns timing.