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CY7C1041GN-10ZSXI

IFXCY7C1041GN-10ZSXI

Infineon Technologies
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II
Active762 in stock

Overview

The CY7C1041GN-10ZSXI is a high-performance 4Mbit asynchronous Static RAM (SRAM) organized as 256K words by 16 bits. It operates on a 4.5V to 5.5V supply and features a fast 10 ns access time, making it suitable for high-speed cache or buffer applications where low latency is critical.

Why Choose This Part

This device offers a rapid 10 ns access time and simplified interface logic that does not require a clock. It is housed in a 44-pin TSOP II package and supports a wide industrial temperature range from -40C to +85C, ensuring reliability in harsh environments.

Applications

Industrial Control Systems
High-speed scratchpad memory for PLCs and industrial controllers requiring 5V logic compatibility.
Networking Equipment
Used as a fast packet buffer or look-up table memory in switches and routers.
Embedded Computing
External expansion memory for microcontrollers and DSPs that lack sufficient internal RAM for data-intensive tasks.

Key Specifications

Technology SRAM - Asynchronous
Access Time 10 ns
Memory Size 4Mbit
Memory Type Volatile
Memory Format SRAM
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width)
Memory Interface Parallel
Voltage - Supply 4.5V ~ 5.5V
Memory Organization 256K x 16
Operating Temperature -40degC ~ 85degC (TA)
Supplier Device Package 44-TSOP II
Write Cycle Time - Word, Page 10ns

Getting Started

To use this SRAM, interface the 18-bit address bus and 16-bit data bus directly to your processor's external memory interface (EMIF) or FSMC. Ensure the CE, OE, and WE control signals are properly timed according to the 10 ns cycle requirements, and place 0.1uF decoupling capacitors close to the VDD pins.

Also Consider

IS61WV25616EDBLL-10TLI ISSI - Provides a similar 4Mb asynchronous SRAM footprint with a lower operating voltage range of 2.4V to 3.6V.
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