IFXCY7C1041GN30-10ZSXI
Overview
The CY7C1041GN30-10ZSXI is a high-performance 4-Mbit asynchronous CMOS static RAM organized as 256K words by 16 bits. It features a fast access time of 10 ns and operates within a wide voltage range of 2.2V to 3.6V, making it suitable for high-speed buffering and temporary data storage in embedded systems.
Why Choose This Part
This SRAM offers an extremely fast 10 ns access time with low active current consumption of 38mA typical. It includes a 1.0-V data retention mode to preserve information during low-power states and features TTL-compatible I/O for easy integration with standard logic levels.
Applications
Key Specifications
Getting Started
To integrate this memory, interface the 16-bit parallel data bus and address lines to your MCU's external memory interface (EMIF) or Flexible Static Memory Controller (FSMC). Ensure proper decoupling with capacitors near the VCC pins and verify that the host controller supports asynchronous SRAM timings for a 10 ns cycle.



