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    Parts    CY7C1061G30-10ZSXI
CY7C1061G30-10ZSXI

IFXCY7C1061G30-10ZSXI

Infineon Technologies
SRAM - Asynchronous Memory IC 16Mbit Parallel 10 ns 54-TSOP II
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Overview

The CY7C1061G30-10ZSXI is a high-performance 16Mbit asynchronous SRAM organized as 1M words by 16 bits. It features an integrated Error Correcting Code (ECC) engine to detect and correct single-bit soft errors, significantly improving reliability in demanding environments. Operating on a supply range of 2.2V to 3.6V, it provides a fast 10 ns access time suitable for high-speed data buffering and caching.

Why Choose This Part

This SRAM includes on-chip ECC that operates transparently to the user, providing hardware-level protection against soft errors without sacrificing its 10 ns speed. It supports 1.0 V data retention for low-power standby modes and is housed in a standard 54-pin TSOP II package for ease of manufacturing.

Applications

Industrial Controller Buffering
High-speed temporary storage for PLC and industrial automation systems requiring fast 10 ns access times.
Networking Infrastructure
Used as look-up tables or packet buffers in routers and switches where low latency is critical.
FPGA External Memory
Expansion memory for FPGA-based designs that need a simple parallel interface without the complexity of a DRAM controller.
Medical Imaging Systems
Fast data logging and frame buffering for diagnostic equipment where data integrity is supported by the internal ECC.

Key Specifications

Technology SRAM - Asynchronous
Access Time 10 ns
Memory Size 16Mbit
Memory Type Volatile
Memory Format SRAM
Mounting Type Surface Mount
Package / Case 54-TSOP (0.400", 10.16mm Width)
Memory Interface Parallel
Voltage - Supply 2.2V ~ 3.6V
Memory Organization 1M x 16
Operating Temperature -40degC ~ 85degC (TA)
Supplier Device Package 54-TSOP II
Write Cycle Time - Word, Page 10ns

Getting Started

To interface with this memory, configure your MCU or FPGA for an asynchronous parallel memory bus using the dual chip enable (CE) and byte enable pins. Ensure proper PCB decoupling and keep trace lengths short to maintain signal integrity for the 10 ns timing requirements. Data retention is possible down to 1.0 V, making it suitable for battery-backed SRAM applications.

Also Consider

IS61WV102416BLL-10TLI ISSI - A direct alternative with the same 16Mb density and 10 ns access time in a similar TSOP II package.
CY7C1061GE30-10ZSXI IFXInfineon Technologies - An alternative version that includes an error indication pin (ERR) to notify the system when an ECC correction has occurred.