IFXCY7C1061GN30-10ZSXI
Overview
The CY7C1061GN30-10ZSXI is a high-performance 16Mbit asynchronous CMOS static RAM organized as 1M words by 16 bits. It operates within a voltage range of 2.2V to 3.6V and features a fast 10 ns access time for high-speed data retrieval. This memory IC is designed with automatic power-down circuitry to reduce current consumption when the device is deselected.
Why Choose This Part
This SRAM offers a low CMOS standby current of 20 mA and supports data retention down to 1.0 V, making it suitable for battery-backed applications. Its dual chip enable (CE1 and CE2) and byte control logic simplify memory bank expansion in 16-bit or 32-bit system architectures.
Applications
Key Specifications
Getting Started
To integrate this device, interface the 20 address lines and 16 data lines to your processor's external memory interface (EMIF) or FSMC. Ensure decoupling capacitors are placed near the VCC pins to manage the 90 mA active current at high frequencies. Verification can be performed using a logic analyzer to monitor the 10 ns write cycle timing requirements.



