DIODGD2184MS8-13
Overview
The DGD2184MS8-13 is a high-voltage, high-speed half-bridge gate driver designed to drive N-channel MOSFETs or IGBTs. It features a floating high-side driver in bootstrap operation up to 600V, making it suitable for applications requiring robust power stage control. The device provides 2.3A output current capability and includes essential protection features such as undervoltage lockout and an internal dead time of 395ns.
Why Choose This Part
This gate driver offers robust operation with its floating high-side driver up to 600V and outputs tolerant to negative transients. The integrated 395ns internal dead time simplifies design by protecting MOSFETs from shoot-through conditions. Its wide supply voltage range of 10V to 20V and 3.3V logic input compatibility provide flexibility for various control circuits.
Applications
Key Specifications
Getting Started
To get started with the DGD2184MS8-13, integrate it into a half-bridge power stage design with appropriate bootstrap components (diode and capacitor). Reference designs for motor control or power conversion are often available from Diodes Incorporated. Utilize standard PCB layout practices for high-speed switching circuits, paying attention to gate drive loop inductance and power decoupling.
