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DMP10H400SE-13

DIODMP10H400SE-13

Diodes Incorporated
P-Channel 100 V 2.3A (Ta), 6A (Tc) 2W (Ta), 13.7W (Tc) Surface Mount SOT-223-3
Active822 in stock
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Overview

The DMP10H400SE-13 is a high-voltage P-Channel enhancement mode MOSFET designed for power management and load switching applications. Rated for 100V and up to 6A continuous collector current at the case, it provides a robust solution for high-side switching in industrial and automotive environments. The device is AEC-Q101 qualified, ensuring high reliability under harsh thermal conditions ranging from -55C to 150C.

Why Choose This Part

This MOSFET features a low Rds(on) of 250mOhm at 10V Vgs, which minimizes conduction losses in power management stages. Its low input capacitance enables fast switching transitions, while the SOT-223 package offers a balance between small surface-mount footprint and effective thermal dissipation up to 13.7W (Tc).

Applications

High-Side Load Switching
Utilizes the P-channel architecture to simplify gate drive circuitry in high-voltage rails up to 100V.
DC-DC Converters
Acts as a power switch in buck or boost topologies requiring fast switching speeds and low input capacitance.
Motor Control
Integrated into H-bridge circuits or brushless DC motor drives for efficient power delivery.
Uninterrupted Power Supplies (UPS)
Manages battery-to-load switching and power path selection in backup systems.

Key Specifications

FET Type P-Channel
Vgs (Max) +/-20V
Technology MOSFET (Metal Oxide)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Vgs(th) (Max) @ Id 3V @ 250uA
Operating Temperature -55degC ~ 150degC (TJ)
Rds On (Max) @ Id, Vgs 250mOhm @ 5A, 10V
Power Dissipation (Max) 2W (Ta), 13.7W (Tc)
Supplier Device Package SOT-223-3
Gate Charge (Qg) (Max) @ Vgs 17.5 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 1239 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25degC 2.3A (Ta), 6A (Tc)

Getting Started

When designing with this P-channel FET, ensure the gate-to-source voltage (Vgs) does not exceed the +/-20V limit. Use wide copper traces on the SOT-223 tab to manage heat dissipation, and refer to the safe operating area (SOA) curves for pulsed current applications.

Categories

Power Management > LDO Voltage Regulators Industrial & Automation > Motor Control & Drives Automotive > EV & Power Electronics
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