EPC90121
Overview
The EPC90121 is a half-bridge development board featuring the EPC2050 eGaN enhancement mode Field Effect Transistor (FET). Designed for power management applications, it simplifies the evaluation of high-speed GaN switching performance with a peak output voltage capability of 280V and up to 4A output current.
Why Choose This Part
The board demonstrates the superior switching speed and thermal performance of EPC2050 GaN FETs compared to silicon MOSFETs. It includes a dedicated gate driver circuit operating at 10V to 12V and provides layout optimization to minimize parasitic inductance.
Applications
Key Specifications
Getting Started
Connect a 10V to 12V DC power supply to the gate drive header and provide a PWM signal to the input pins. Ensure the high voltage supply (up to 280V) is applied to the VIN terminals while monitoring the output at the switch node via the onboard test points.
