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FDS4435BZ

ONFDS4435BZ

onsemi
P-Channel 30 V 8.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Active43,980 in stock
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Overview

The FDS4435BZ is a 30V P-Channel MOSFET designed to provide low on-resistance and high power handling in a standard SO-8 footprint. Utilizing onsemi proprietary PowerTrench technology, it is optimized for high-efficiency power management and load switching applications. The device is rated for a continuous drain current of 8.8A and features a maximum RDS(on) of 20 mOhm at a 10V gate-source voltage.

Why Choose This Part

The FDS4435BZ offers a high ESD protection level and is designed to minimize switching losses. Its SO-8 package provides a familiar footprint for automated assembly while maintaining a low thermal resistance for a power dissipation rating up to 2.5W. The 25V maximum gate-source voltage rating provides a robust safety margin for 12V and 19V power rails.

Applications

High-Side Load Switching
Ideal for enabling or disabling power rails in portable electronics due to its P-channel configuration which simplifies gate drive circuitry.
Battery Management Systems
Used in battery protection circuits for efficient charging and discharging control in multi-cell packs.
DC-DC Converters
Serves as an efficient switch in buck or boost topologies where space and thermal performance are critical.
Notebook and Tablet Power
Suitable for power path management and bus switching in mobile computing platforms.

Key Specifications

FET Type P-Channel
Vgs (Max) +/-25V
Technology MOSFET (Metal Oxide)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id 3V @ 250uA
Operating Temperature -55degC ~ 155degC (TJ)
Rds On (Max) @ Id, Vgs 20mOhm @ 8.8A, 10V
Power Dissipation (Max) 2.5W (Ta)
Supplier Device Package 8-SOIC
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 1845 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25degC 8.8A (Ta)

Getting Started

When designing with this MOSFET, ensure adequate copper pour area on the PCB at the drain pins (5-8) to act as a heatsink. Use a standard gate driver or a discrete transistor circuit capable of handling the gate charge for high-frequency switching. Verify that the gate-source voltage stays within the +/-25V limit during transient events.