ONFDT86106LZ
Overview
The FDT86106LZ is a 100V N-Channel MOSFET from onsemi, designed for high-efficiency power management in a compact SOT-223-4 package. It features integrated Zener diode protection on the gate to provide robust ESD performance and a logic-level gate threshold for direct drive from microcontrollers. With an Rds(on) of 108mOhm and a continuous drain current of 3.2A, it is optimized for switching and load management applications.
Why Choose This Part
This MOSFET offers a low gate-source threshold voltage of 2.2V, enabling efficient operation with logic-level control signals. The SOT-223 package provides a balance of thermal performance and space savings, supporting up to 2.2W of power dissipation. Additionally, the built-in Zener diode protects the gate against electrostatic discharge and voltage transients up to +/-20V.
Applications
Key Specifications
Getting Started
When integrating the FDT86106LZ, ensure the SOT-223 tab is soldered to a large copper plane to manage the 2.2W thermal dissipation limit. For high-speed switching, calculate the gate drive requirements based on the total gate charge to minimize switching losses. Verify that the 100V Vds rating provides sufficient margin for inductive voltage spikes in motor or solenoid applications.



