IFXFM24CL04B-GTR
Overview
The FM24CL04B-GTR is a 4Kbit non-volatile memory that utilizes ferroelectric technology (F-RAM) to provide high-speed writes and high endurance. Unlike standard EEPROM, this device performs write operations at bus speed without requiring write delays, and it operates over an I2C interface at frequencies up to 1 MHz. It is designed for low-power operation with a typical standby current of 3 uA and a supply voltage range of 2.7V to 3.6V.
Why Choose This Part
F-RAM technology offers virtually unlimited endurance (100 trillion read/write cycles) and eliminates the 5ms to 10ms write delay associated with EEPROM. It provides superior data integrity during power failures because the write process completes instantly. The ultra-low power consumption, including a 0.17mA active current at 400kHz, makes it suitable for battery-constrained applications.
Applications
Key Specifications
Getting Started
Engineers can interface this device with any MCU using a standard I2C master peripheral; no special timing drivers are required beyond setting the I2C clock speed up to 1 MHz. Pull-up resistors should be sized according to the bus capacitance to ensure signal integrity at higher speeds. For prototyping, the 8-SOIC package can be used with a standard SOIC-to-DIP adapter on a breadboard.



