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FM24V10-GTR

IFXFM24V10-GTR

Infineon Technologies
F-RAM 1M (128Kx8) 2.0-3.6V F-RAM
NRND1,751 in stock
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Overview

The FM24V10-GTR is a 1-Mbit non-volatile Ferroelectric Random Access Memory (F-RAM) organized as 128K x 8 bits. Unlike standard EEPROM, it performs write operations at bus speed without internal write delays, offering virtually unlimited endurance of 100 trillion read/write cycles. It operates over a 2.0V to 3.6V range and features a high-speed I2C interface supporting frequencies up to 3.4 MHz.

Why Choose This Part

The F-RAM technology provides significant advantages over EEPROM, including 100-trillion cycle endurance and the absence of a polling delay after write commands. It consumes very low power, drawing only 150 microamps at 100 kHz and featuring a 5 microamp sleep mode, making it suitable for battery-critical applications.

Applications

High-Frequency Data Logging
Ideal for systems that require continuous data recording where EEPROM wear-out or slow write cycles would be a bottleneck.
Configuration Storage
Reliably stores system settings that must be preserved during power loss and updated frequently during operation.
Industrial PLC State Retention
Captures real-time machine states and counter values instantly upon power failure without requiring large backup capacitors.

Getting Started

To interface with the FM24V10-GTR, use a standard I2C master controller and pull-up resistors on the SDA and SCL lines. Engineers can use the CY15FRAMKIT-002 development kit from Infineon to evaluate F-RAM performance and software integration. Ensure the VDD remains within the 2.0V to 3.6V operating range and manage the three hardware address pins to support up to eight devices on a single bus.