IFXFM25L16B-GTR
Overview
The FM25L16B-GTR is a 16-Kbit non-volatile memory employing an advanced ferroelectric process. Unlike standard EEPROM, this F-RAM device performs write operations at bus speed with no write delays and offers extreme endurance of 100 trillion read/write cycles. It operates over a voltage range of 2.7V to 3.6V and interfaces via a high-speed SPI bus up to 20 MHz.
Why Choose This Part
This F-RAM provides virtually unlimited endurance compared to EEPROM and Flash, eliminating the need for complex wear-leveling algorithms. It features extremely low power consumption, drawing only 3uA in standby and 0.2mA at 1MHz, while supporting immediate non-volatile storage with NoDelay writes.
Applications
Key Specifications
Getting Started
To use this device, connect the SPI pins (CS, SCK, MOSI, MISO) to your microcontroller and ensure the WP pin is tied high if hardware protection is not required. It follows standard SPI memory protocols, so existing EEPROM drivers can often be adapted by removing write-polling loops. Evaluation can be performed using standard SOIC-8 breakout boards or Infineon's Excelon F-RAM development kits.
