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FM25V10-DG

IFXFM25V10-DG

Infineon Technologies
F-RAM FRAM
88 in stock

Overview

The FM25V10-DG is a 1-Mbit (128 KB) non-volatile Ferroelectric Random Access Memory (F-RAM) that utilizes an SPI interface for high-speed data transfer up to 40MHz. Unlike standard Flash or EEPROM, this device offers high-endurance read/write cycles and instantaneous data storage without write delays, making it ideal for systems requiring frequent or rapid data logging.

Why Choose This Part

This F-RAM features exceptional endurance and operates with extremely low power consumption, drawing only 0.3mA at 1MHz and 5uA in sleep mode. It eliminates the 5ms to 10ms write delays typical of EEPROM, ensuring data is non-volatile immediately upon the completion of the SPI bus cycle.

Applications

Industrial Data Logging
Continuous recording of sensor data and system states where high write endurance is required to prevent memory wear-out.
Power-Fail Event Capture
Instantly saving critical system parameters during a power loss event thanks to the absence of a 'soak time' or write-cycle delay.
Configuration Storage
Maintaining user settings and calibration constants that may be updated frequently during system operation.

Getting Started

To evaluate this memory, interface the 8-pin DFN package with any SPI-capable microcontroller operating between 2.0V and 3.6V. Since it follows standard SPI memory protocols, engineers can typically adapt existing SPI Flash drivers by removing the page-write delays and sector-erase requirements.

Also Consider

FM25V02A IFXInfineon Technologies - A lower-capacity 256-Kbit F-RAM alternative for applications with smaller data storage requirements.
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