IFXFM25V10-G
Overview
The FM25V10-G is a 1Mbit non-volatile ferroelectric RAM (F-RAM) organized as 128K x 8 bits and accessed via a 40 MHz SPI interface. Unlike standard Flash or EEPROM, F-RAM technology offers NoDelay writes, allowing data to be written at full bus speed without a soak time. It operates over a 2.0V to 3.6V supply range and features extremely high endurance of 100 trillion read/write cycles.
Why Choose This Part
The primary advantage is the 10^14 write cycle endurance, which effectively eliminates the wear-out concerns associated with other non-volatile technologies. It also features a very low 5 microamp sleep current and 0.3mA active current at 1MHz, making it suitable for power-constrained applications.
Applications
Key Specifications
Getting Started
Engineers can interface this part with any SPI-capable microcontroller using standard SPI Mode 0 or Mode 3. Since F-RAM behaves like an SRAM with non-volatile retention, no special timing loops or polling for write-completion are required in the software driver. Evaluation can be performed using generic 8-pin SOIC breakout boards or Infineon's dedicated F-RAM development kits.
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