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FM25W256-G

IFXFM25W256-G

Infineon Technologies
F-RAM SPI FRAM 256k 3-5V
NRND3,055 in stock
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Overview

The FM25W256-G is a 256Kbit non-volatile ferroelectric RAM (F-RAM) organized as 32K x 8 and accessed via a high-speed SPI interface. Unlike standard EEPROM or Flash, F-RAM performs write operations at bus speed without soak times and offers virtually unlimited endurance of 100 trillion read/write cycles. This device supports a wide supply voltage range from 2.7V to 5.5V, making it compatible with both 3.3V and 5V logic systems.

Why Choose This Part

The primary advantage is its 10^14 write cycle endurance, which effectively eliminates wear-out concerns in most applications. It provides high-speed writes at the full 20 MHz SPI clock frequency without the typical 5ms to 10ms delay required by EEPROM. Additionally, it maintains extremely low power consumption with a typical standby current of only 15 microamps.

Applications

High-Frequency Data Logging
Ideal for systems that require continuous state logging or sensor data recording where the endurance limits of EEPROM would be exceeded.
Configuration and Settings Storage
Reliable storage for system parameters that must survive power cycles and may be updated frequently during operation.
Power-Fail Event Capture
The NoDelay write capability ensures that critical system state data is successfully written to non-volatile memory the moment power is lost.
Industrial Control Systems
Used in PLC and motor control environments to track machine cycles, runtime hours, and error logs in harsh electrical conditions.

Key Specifications

Technology FRAM (Ferroelectric RAM)
Memory Size 256Kbit
Memory Type Non-Volatile
Memory Format FRAM
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Clock Frequency 20 MHz
Memory Interface SPI
Voltage - Supply 2.7V ~ 5.5V
Memory Organization 32K x 8
Operating Temperature -40degC ~ 85degC (TA)
Supplier Device Package 8-SOIC

Getting Started

To interface with the FM25W256-G, use a standard SPI master operating in Mode 0 or Mode 3. Ensure the Write Protect (WP) pin is tied high or controlled by GPIO if hardware write protection is required. Firmware can use standard SPI commands for reading and writing, treating the F-RAM as a fast, non-volatile SRAM without needing to poll for write-cycle completion.

Also Consider

CY15B102QN IFXInfineon Technologies - Offers a much larger 2Mbit capacity and faster 50MHz SPI clock if the 256Kbit density is insufficient.
25LC256 MCHPMicrochip Technology - A lower-cost EEPROM alternative if high write endurance and NoDelay write performance are not critical requirements.
FM25V02A IFXInfineon Technologies - A 2V to 3.6V specialized F-RAM variant optimized for lower voltage battery-powered applications.