ONFOD817B3SD
Overview
The FOD817B3SD is a single-channel phototransistor optocoupler designed to provide 5000Vrms electrical isolation between input and output stages. It consists of a gallium arsenide (GaAs) infrared emitting diode driving a silicon phototransistor in a surface-mount 4-SMD package. This component is commonly used to protect sensitive low-voltage logic from high-voltage transients in power supplies and industrial control systems.
Why Choose This Part
This device offers a high isolation voltage of 5000Vrms and a 70V maximum output voltage, making it robust for high-voltage switching. With a low Vce saturation of 200mV and a typical rise time of 4us, it provides efficient signal transfer with minimal power loss in the output transistor. The wide operating temperature range of -55 to 110 degrees Celsius ensures reliability in harsh industrial environments.
Applications
Key Specifications
Getting Started
To implement the FOD817B3SD, calculate the series resistor for the input LED based on a typical 5mA run current to ensure reliable switching. Ensure the output transistor is biased correctly within the 70V limit and consider the 3us fall time for high-speed signal requirements. When designing the PCB, maintain proper creepage and clearance distances under the 4-SMD package to preserve the 5000Vrms isolation integrity.




