EmbeddedRelated.com
    Parts    FQP27P06
FQP27P06

ONFQP27P06

onsemi
P-Channel 60 V 27A (Tc) 120W (Tc) Through Hole TO-220-3
Active15,844 in stock
Datasheet Digi-Key Compare Prices

Overview

The FQP27P06 is a 60V P-channel enhancement mode MOSFET manufactured using onsemi proprietary planar stripe and DMOS technology. This power MOSFET is designed for low on-state resistance and high ruggedness, making it suitable for high-efficiency power conversion and switching applications.

Why Choose This Part

The TO-220 through-hole package provides excellent thermal dissipation, capable of handling up to 120W with appropriate heat sinking. Its 70mOhm low RDS(on) minimizes conduction losses, while the high 27A continuous drain current rating supports demanding industrial loads.

Applications

High-Side Load Switching
Ideal for high-side power switching where the source is connected to the positive rail, simplifying gate drive circuitry compared to N-channel alternatives.
DC Motor Control
Used in H-bridge configurations or as a high-side switch for controlling DC motors in industrial and consumer robotics.
Audio Power Amplifiers
Serves as a power stage component in audio amplification circuits requiring high current handling and linear performance.
Switched Mode Power Supplies (SMPS)
Functions as a switching regulator element in DC-DC converters where P-channel logic is preferred for circuit simplicity.

Key Specifications

FET Type P-Channel
Vgs (Max) +/-25V
Technology MOSFET (Metal Oxide)
Mounting Type Through Hole
Package / Case TO-220-3
Vgs(th) (Max) @ Id 4V @ 250uA
Operating Temperature -55degC ~ 155degC (TJ)
Rds On (Max) @ Id, Vgs 70mOhm @ 13.5A, 10V
Power Dissipation (Max) 120W (Tc)
Supplier Device Package TO-220-3
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25degC 27A (Tc)

Getting Started

When designing with this MOSFET, ensure the gate-to-source voltage (Vgs) does not exceed the +/-25V limit to prevent oxide breakdown. For logic-level control, verify that your driver can provide sufficient current to charge the gate capacitance for the desired switching frequency. Use a dedicated heat sink for applications exceeding a few watts of power dissipation to maintain junction temperatures below the 175C maximum rating.