ONFQP30N06L
Overview
The FQP30N06L is an N-channel enhancement mode power MOSFET produced using onsemi proprietary planar stripe and DMOS technology. This logic-level MOSFET is designed to minimize on-state resistance and provide superior switching performance, making it suitable for low-voltage applications driven directly by microcontrollers.
Why Choose This Part
The primary advantage is its logic-level gate threshold, allowing the MOSFET to reach full saturation with gate voltages as low as 5V. Its TO-220 package provides excellent thermal dissipation capabilities, supporting a continuous drain current of up to 32A and a maximum junction temperature of 175 degrees Celsius.
Applications
Key Specifications
Getting Started
When using this MOSFET with a microcontroller, connect a 100 to 220 ohm resistor between the GPIO pin and the Gate to limit inrush current, and a 10k ohm pulldown resistor from Gate to Source to prevent accidental triggering. Ensure the TO-220 tab is either floating or connected to the Source if using a heatsink, as the tab is internally connected to the Drain.



