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FZT853TA

DIOFZT853TA

Diodes Incorporated
Bipolar (BJT) Transistor NPN 100 V 6 A 130MHz 3 W Surface Mount SOT-223-3
Active85,986 in stock

Overview

The FZT853TA is a high-performance NPN bipolar junction transistor designed for medium power applications, featuring a high collector current rating of 6A and a 100V breakdown voltage. It is housed in a SOT-223 surface mount package, providing a balance between compact footprint and 3W power dissipation capabilities. This AEC-Q101 qualified device is particularly suited for high-reliability environments requiring efficient switching and low saturation voltages.

Why Choose This Part

The FZT853TA offers an exceptional gain-bandwidth product of 130MHz, making it faster than many comparable medium power BJTs. Its extremely low saturation voltage (max 340mV at 5A) minimizes thermal losses, while the AEC-Q101 qualification ensures it meets rigorous automotive reliability standards.

Applications

DC-DC Converters
Used as a primary switch or synchronous rectifier driver due to its low 340mV saturation voltage at high currents.
Motor Driving
Acts as a robust output stage for small brushed DC motors or stepper motor phases in industrial and automotive systems.
Relay and Solenoid Drivers
Handles high inductive kickback loads with a 100V VCEO rating and high pulsed current capacity.
LED Lighting Strings
Serves as a linear or PWM-controlled constant current sink for high-brightness LED arrays.

Key Specifications

Power - Max 3 W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Type NPN
Operating Temperature -55degC ~ 150degC (TJ)
Frequency - Transition 130MHz
Supplier Device Package SOT-223-3
Vce Saturation (Max) @ Ib, Ic 340mV @ 500mA, 5A
Current - Collector (Ic) (Max) 6 A
Current - Collector Cutoff (Max) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A, 2V
Voltage - Collector Emitter Breakdown (Max) 100 V

Getting Started

When integrating this NPN transistor, ensure the SOT-223 collector tab is soldered to a large copper plane to achieve the rated 3W power dissipation. Use a base resistor to limit Ib according to the 500mA maximum base current specification for high-saturation switching. For prototyping, this component is compatible with SOT-223 to DIP adapter boards for breadboard testing.