IFXIPT007N06NATMA1

Overview

The IPT007N06NATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies designed for power conversion and motor control. It features an exceptionally low drain-source on-resistance of 0.75mOhm and is housed in the PG-HSOF-8 package, which is optimized for high-current density and improved thermal performance. With a maximum continuous current rating of 486A and a 60V breakdown voltage, it is suited for demanding industrial and automotive power applications.

Why Choose This Part

This MOSFET offers industry-leading Rds(on) to minimize power dissipation and heat generation in compact designs. The PG-HSOF-8 (TO-Leadless) package provides a significantly smaller footprint than traditional TO-220 or D2PAK packages while maintaining superior thermal dissipation capabilities up to 375W. Its 175 degree Celsius operating junction temperature ensures reliability in harsh environments.

Applications

Getting Started

When designing with the IPT007N06NATMA1, engineers should focus on thermal PCB design, utilizing large copper pours and multiple thermal vias to manage the 375W peak power dissipation. For prototyping, ensure the gate driver is capable of providing sufficient peak current to manage the gate charge at high switching frequencies. Evaluation can be performed using Infineon's standard OptiMOS 5 evaluation boards or custom power stage modules.