IR2101PBF
Overview
The IR2101PBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It features a floating high-side channel capable of operating up to 600V and is designed to drive N-channel power MOSFETs and IGBTs in half-bridge configurations. The logic inputs are compatible with standard CMOS or LSTTL outputs, supporting logic levels as low as 3.3V.
Why Choose This Part
The device offers a small 8-pin footprint while maintaining a high offset voltage capability of 600V. It features matched propagation delays for both channels to prevent timing-related bridge shoot-through and includes undervoltage lockout to ensure the power MOSFETs are not operated in the linear region.
Applications
Getting Started
Designers should use a low-ESR ceramic capacitor for the bootstrap circuit to provide the necessary high-side gate charge. Ensure the HIN and LIN logic signals are appropriately isolated from high-power noise, and utilize the PDIP package for easy prototyping on standard 2.54mm pitch breadboards or perfboards.
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