IR2110PBF
Overview
The IR2110PBF is a high-speed, high-voltage power MOSFET and IGBT driver with independent high-side and low-side referenced output channels. It utilizes proprietary HVIC and latch immune CMOS technologies to provide a ruggedized solution for driving N-channel power MOSFETs or IGBTs in bridge configurations up to 500V.
Why Choose This Part
The IR2110PBF offers a robust 2A source and sink current capability, ensuring fast gate charging for large power devices. Its floating channel supports bootstrap operation up to 500V, while the logic-level inputs are compatible with 3.3V systems and provide a wide logic supply range from 3.3V to 20V.
Applications
Getting Started
When designing with the IR2110PBF, ensure the bootstrap capacitor (Cboot) is sized correctly to maintain voltage during the high-side duty cycle. Use a high-frequency decoupling capacitor close to the VDD and VCC pins to minimize noise, and keep gate drive traces short to reduce parasitic inductance.
