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IR2110STRPBF

IR2110STRPBF

Infineon
Higher-voltage high/low-side driver in the same family if your application needs a different voltage rating or timing feature set.
10,069 in stock
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Overview

The IR2110STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high- and low-side referenced output channels. It features a floating channel designed for bootstrap operation up to 500V or 600V, making it suitable for driving N-channel power MOSFETs and IGBTs in high-side configurations.

Why Choose This Part

The device offers excellent noise immunity and 3.3V logic compatibility with a separate logic supply (Vdd) ranging from 3.3V to 20V. Its outputs are in phase with inputs and feature matched propagation delays, which simplifies timing requirements in high-frequency switching applications.

Applications

Full-Bridge Motor Drives
Utilizes matched propagation delays and high-side bootstrap capabilities to drive N-channel MOSFETs in H-bridge configurations for DC motor control.
Switch-Mode Power Supplies (SMPS)
Provides high-frequency gate drive for power conversion stages requiring high-side and low-side switching with 2A peak output current.
Uninterruptible Power Supplies (UPS)
Manages power MOSFET switching in inverter stages, benefiting from 3.3V logic compatibility and undervoltage lockout protection.
Solar Inverters
Handles high-voltage rails up to 500V while maintaining immunity to negative transients and dV/dt noise.

Getting Started

When designing with the IR2110STRPBF, ensure the bootstrap capacitor is sized correctly for the gate charge of the high-side MOSFET. Place decoupling capacitors close to the Vcc and Vdd pins to minimize switching noise, and refer to the 16-lead SOIC footprint for thermal management of the high-side driver.

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