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IR2113STRPBF

IFXIR2113STRPBF

Infineon Technologies
Gate Drivers Hi&Lw Sd Drvr All HiVlt Pins 1 Sd
1,959 in stock

Overview

The IR2113STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It features a floating channel designed for bootstrap operation up to 600V, making it suitable for driving N-channel MOSFETs in high-side configurations. The device is 3.3V logic compatible and offers matched propagation delays to prevent shoot-through in bridge circuits.

Why Choose This Part

This driver provides 2A source/sink peak output current and is highly immune to dV/dt transients and negative voltage spikes. It features integrated undervoltage lockout on both channels and a separate logic supply range from 3.3V to 20V, allowing for easy interfacing with low-voltage microcontrollers.

Applications

Brushless DC (BLDC) Motor Drives
Used in three-phase inverter stages to drive high-side and low-side N-channel MOSFETs with precise timing.
Switch-Mode Power Supplies (SMPS)
Ideal for half-bridge and full-bridge topologies requiring high-speed switching and robust noise immunity.
Uninterruptible Power Supplies (UPS)
Provides the necessary gate drive current for power stages in high-voltage DC-AC conversion.
Solar Inverters
Manages power MOSFETs in string inverters where high-side floating bootstrap supplies are required.

Getting Started

When designing with the IR2113, ensure the bootstrap capacitor is sized correctly to maintain the high-side gate charge over the duty cycle. Place the 16-lead SOIC package close to the power switches to minimize gate loop inductance and include a decoupling capacitor on the VDD and VCC pins. Use the shutdown (SD) pin for cycle-by-cycle protection against overcurrent conditions.

Also Consider

IR2110STRPBF IFXInfineon Technologies - A very similar industry-standard driver that supports the same voltage range with slightly different timing characteristics.