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IRF3205PBF

IRF3205PBF

Infineon (formerly International Rectifier)
55 V, very low Rds(on) device in TO-220 for higher-current 12/24 V applications where lower conduction loss is required.
7,609 in stock
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Overview

The IRF3205PBF is a high-power N-Channel HEXFET MOSFET designed for applications requiring extremely low on-resistance and high current handling capacity. It features a 55V drain-to-source rating and can handle up to 110A of continuous current at 25 degrees Celsius, making it a staple for power conversion and motor control. The TO-220AB package ensures robust thermal management for demanding industrial and automotive environments.

Why Choose This Part

The primary advantage is the ultra-low on-resistance of 8mOhm, which significantly minimizes conduction losses during high-current operation. It is fully avalanche rated and features a fast switching speed, allowing for high-efficiency operation in power conversion stages up to 175 degrees Celsius.

Applications

DC Motor Speed Control
Ideal for H-bridge configurations and PWM speed controllers in power tools and robotics.
Uninterruptible Power Supplies (UPS)
Used in high-frequency inverter stages to provide efficient power switching.
Battery Protection Circuits
Acts as a high-current disconnect for large 12V or 24V battery banks in off-road or marine systems.
Solar Charge Controllers
Efficiently manages high-current DC-DC conversion from PV panels to storage batteries.

Key Specifications

FET Type N-Channel
Vgs (Max) +/-20V
Technology MOSFET (Metal Oxide)
Mounting Type Through Hole
Package / Case TO-220-3
Vgs(th) (Max) @ Id 4V @ 250uA
Operating Temperature -55degC ~ 175degC (TJ)
Rds On (Max) @ Id, Vgs 8mOhm @ 62A, 10V
Power Dissipation (Max) 200W (Tc)
Supplier Device Package TO-220AB
Gate Charge (Qg) (Max) @ Vgs 146 nC @ 10 V
Drain to Source Voltage (Vdss) 55 V
Input Capacitance (Ciss) (Max) @ Vds 3247 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25degC 110A (Tc)

Getting Started

When designing with the IRF3205PBF, ensure the gate driver can provide sufficient peak current to charge the 146nC gate charge for fast switching. Use a substantial heat sink and low-impedance PCB traces to manage the 110A thermal requirements. A 10V gate-to-source voltage is required to achieve the rated Rds(on) performance.

IRF3205 Family

Also available as: IRF3205

Also Consider

IRFZ44NPBF Infineon - A more cost-effective alternative for lower current applications (49A) that still require 55V-60V tolerance.
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