IFXIRFB4110PBF
Overview
The IRFB4110PBF is a high-performance N-Channel HEXFET Power MOSFET designed for applications requiring high power density and efficient switching. It supports a maximum drain-to-source voltage of 100V and a continuous drain current of 120A, housed in a standard through-hole TO-220AB package. With an extremely low on-resistance of 4.5mOhm at 10V Vgs, it minimizes conduction losses in demanding power electronics.
Why Choose This Part
This MOSFET features an industry-leading low Rds(on) of 4.5mOhm, significantly reducing thermal management requirements by lowering heat dissipation. Its 175 degree Celsius operating junction temperature and high power dissipation rating of 370W provide a robust safety margin for industrial environments. The TO-220AB package ensures easy mounting to heat sinks and suitability for through-hole PCB assembly.
Applications
Key Specifications
Getting Started
When designing with the IRFB4110PBF, ensure the gate driver can provide sufficient peak current to charge the gate charge quickly for high-frequency switching. Use a Kelvin connection for the source terminal where possible to minimize parasitic inductance during high-current transitions. For thermal management, apply a high-quality thermal interface material between the TO-220 tab and the heat sink.
