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IRFL014NTRPBF

IFXIRFL014NTRPBF

Infineon Technologies
N-Channel 55 V 1.9A (Ta) 1W (Ta) Surface Mount SOT-223
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Overview

The IRFL014NTRPBF is an N-channel power MOSFET designed for high-speed switching and power management in a compact SOT-223 package. It features a 55V breakdown voltage and a continuous drain current of 1.9A, making it suitable for low-voltage power conversion tasks. This device utilizes advanced HEXFET technology to achieve low on-resistance of 160mOhm, minimizing conduction losses during operation.

Why Choose This Part

The SOT-223 package offers a balance between thermal performance and a small footprint, providing a 1W power dissipation rating. Its relatively low gate charge allows for efficient high-speed switching even when driven by standard microcontrollers or logic-level buffers. The 55V rating provides significant design margin for common 12V and 24V bus architectures.

Applications

DC-DC Converters
Used as a switching element in low-power buck or boost converters where space is a constraint.
Load Switching
Acts as a high-side or low-side switch for peripherals, motors, or lighting strings in 12V and 24V systems.
Battery Management Systems
Integrated into protection circuits or balancing networks for multi-cell battery packs.
Solenoid and Relay Driving
Capable of handling inductive loads in industrial and consumer automation systems.

Key Specifications

FET Type N-Channel
Vgs (Max) +/-20V
Technology MOSFET (Metal Oxide)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Vgs(th) (Max) @ Id 4V @ 250uA
Operating Temperature -55degC ~ 150degC (TJ)
Rds On (Max) @ Id, Vgs 160mOhm @ 1.9A, 10V
Power Dissipation (Max) 1W (Ta)
Supplier Device Package SOT-223
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Drain to Source Voltage (Vdss) 55 V
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25degC 1.9A (Ta)

Getting Started

When designing with the IRFL014NTRPBF, ensure the PCB includes sufficient copper pour around the SOT-223 tab to act as a heatsink. Use a gate resistor to dampen oscillations and verify the 4V maximum gate threshold voltage is compatible with your control logic level. For simulation, SPICE models are typically available from the Infineon website to validate switching performance and thermal rise.