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IRFL024ZTRPBF

IFXIRFL024ZTRPBF

Infineon Technologies
N-Channel 55 V 5.1A (Ta) 1W (Ta) Surface Mount SOT-223
Active58,207 in stock
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Overview

The IRFL024ZTRPBF is a N-Channel HEXFET power MOSFET designed by Infineon for high-efficiency power conversion in a compact SOT-223 package. It provides a 55V drain-to-source breakdown voltage and is capable of handling up to 5.1A of continuous drain current at ambient temperature. This component is optimized for fast switching and low on-resistance to minimize power losses in space-constrained designs.

Why Choose This Part

This MOSFET features a very low maximum on-resistance of 57.5mOhm at 10V gate drive, which significantly reduces conduction losses. It is rated for a wide operating temperature range up to 150 degrees Celsius and allows for repetitive avalanche up to the maximum junction temperature, increasing circuit robustness against voltage spikes.

Applications

DC-DC Converters
Used as a primary switch in small-scale step-down or step-up power supplies requiring efficient power conversion.
Solenoid and Relay Drivers
Provides reliable switching for inductive loads in industrial and consumer automation systems.
Low-Side Load Switching
Effective for controlling power rails in battery-operated devices where low RDS(on) helps preserve battery life.
Small Motor Control
Suitable for driving small DC motors or fans where space for thermal management is limited.

Key Specifications

FET Type N-Channel
Vgs (Max) +/-20V
Technology MOSFET (Metal Oxide)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Vgs(th) (Max) @ Id 4V @ 250uA
Operating Temperature -55degC ~ 150degC (TJ)
Rds On (Max) @ Id, Vgs 57.5mOhm @ 3.1A, 10V
Power Dissipation (Max) 1W (Ta)
Supplier Device Package SOT-223
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Drain to Source Voltage (Vdss) 55 V
Input Capacitance (Ciss) (Max) @ Vds 340 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25degC 5.1A (Ta)

Getting Started

To implement this MOSFET, ensure the SOT-223 land pattern includes sufficient copper pour for thermal dissipation, as the 1W rating is dependent on the PCB layout. Use a standard MOSFET gate driver or a logic-level signal capable of providing sufficient current to charge the gate for fast switching applications. Refer to the safe operating area (SOA) curves in the datasheet to ensure the 5.1A limit is not exceeded during transient events.

Categories

Wireless & Connectivity > RF Components