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IRFR9024NTRPBF

IFXIRFR9024NTRPBF

Infineon Technologies
P-Channel 55 V 11A (Tc) 38W (Tc) Surface Mount TO-252AA (DPAK)
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Overview

The IRFR9024NTRPBF is an advanced P-channel HEXFET Power MOSFET from Infineon Technologies designed for efficient high-side switching in a surface-mount DPAK (TO-252AA) package. It features a drain-to-source breakdown voltage of 55V and supports a continuous drain current of up to 11A at 25 degrees Celsius. This MOSFET is optimized for applications requiring low on-resistance and fast switching speeds in a compact footprint.

Why Choose This Part

This device offers a maximum Rds(on) of 175mOhm at 10V, which helps minimize power dissipation during conduction. Its fast switching characteristics and low gate charge of 19nC reduce switching losses in high-frequency applications. The DPAK surface-mount package provides a reliable balance between thermal performance (38W power dissipation rating) and board space efficiency.

Applications

High-Side Switching
Used in power management circuits where a P-channel device simplifies the gate drive by allowing the source to be connected to the positive supply rail.
DC Motor Drive
Ideal for forming the upper half of an H-bridge or half-bridge configuration for bidirectional motor control.
Power Management
Suitable for load switching and battery protection circuits in industrial and consumer electronics.
Reverse Polarity Protection
Can be utilized as a low-loss alternative to a diode for protecting circuitry against incorrect battery or power supply connection.

Key Specifications

FET Type P-Channel
Vgs (Max) +/-20V
Technology MOSFET (Metal Oxide)
Mounting Type Surface Mount
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id 4V @ 250uA
Operating Temperature -55degC ~ 150degC (TJ)
Rds On (Max) @ Id, Vgs 175mOhm @ 6.6A, 10V
Power Dissipation (Max) 38W (Tc)
Supplier Device Package TO-252AA (DPAK)
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Drain to Source Voltage (Vdss) 55 V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25degC 11A (Tc)

Getting Started

When designing with this P-channel MOSFET, ensure the Gate-to-Source voltage (Vgs) does not exceed the +/-20V maximum rating. For efficient operation, use a gate drive voltage of 10V to achieve the specified minimum on-resistance. Ensure adequate PCB copper pouring around the DPAK tab to manage thermal dissipation for loads approaching the 11A continuous current limit.