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IRLL024NTRPBF

IFXIRLL024NTRPBF

Infineon Technologies
N-Channel 55 V 3.1A (Ta) 1W (Ta) Surface Mount SOT-223
Active54,226 in stock
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Overview

The IRLL024NTRPBF is an N-Channel HEXFET Power MOSFET from Infineon designed to operate with very low gate-to-source thresholds. This device is optimized for logic-level applications, allowing it to be driven directly from 5V CMOS or TTL circuits without additional level-shifting components. It is housed in a compact SOT-223 package, making it suitable for surface-mount designs where board space is limited.

Why Choose This Part

This MOSFET offers a low gate threshold voltage (Vgs(th) max of 2V), which is critical for systems with limited drive voltage. The 65mOhm Rds(on) at 10V provides efficient power delivery with minimal heat generation for a SOT-223 device. It maintains a high junction temperature rating of up to 150 degrees Celsius, ensuring reliability in demanding thermal environments.

Applications

Logic Level Switching
Directly interface with 5V microcontrollers to drive peripheral loads without external gate drivers.
DC-DC Converters
Acts as an efficient switching element in low-power buck or boost regulators.
Solenoid and Relay Driving
Switches inductive loads in industrial or consumer electronics using minimal gate drive power.
Battery Powered Systems
Low gate threshold and 3.1A current capacity make it ideal for power management in portable devices.

Key Specifications

FET Type N-Channel
Vgs (Max) +/-16V
Technology MOSFET (Metal Oxide)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Vgs(th) (Max) @ Id 2V @ 250uA
Operating Temperature -55degC ~ 150degC (TJ)
Rds On (Max) @ Id, Vgs 65mOhm @ 3.1A, 10V
Power Dissipation (Max) 1W (Ta)
Supplier Device Package SOT-223
Gate Charge (Qg) (Max) @ Vgs 15.6 nC @ 5 V
Drain to Source Voltage (Vdss) 55 V
Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Current - Continuous Drain (Id) @ 25degC 3.1A (Ta)

Getting Started

When designing with the IRLL024NTRPBF, ensure the gate drive circuit can provide enough peak current to charge the gate capacitance for the desired switching frequency. Since the SOT-223 package relies on the PCB copper for heat sinking, include a large drain pad or thermal vias to stay within the 1W power dissipation limit. Use a standard flyback diode across inductive loads like motors or solenoids to protect the MOSFET from voltage spikes.